1.State two parameters that control the concentration of intrinsic carriers in a
ID: 1262835 • Letter: 1
Question
1.State two parameters that control the concentration of intrinsic carriers in a semiconductor?
2.Using Boltzmann approximation ,print the equation for electron concentration n. at temperature T Kelvin.
3. a).Plot a simple diagram to show how the intrinsic concentration of carriers change with reciprocal of temperature T?
b).How would be intrinsic concentration change at a fixed T if the band gap is higher?
4.What does the law of mass action state?
5.Describe an element that acts like a donor in a semiconductor host material.
6.How does the Fermi Energy state change in semiconductor that is doped n-type?
7.Plot a diagram to show a pn junction under equilibrium. Cleary show all important parameters?
8.Plot a diagram to show drift and diffusion current and change movement in a pn junction?
9.Plot a diagram to show excess charge profile and the currents in a forward biased pn junction?
Explanation / Answer
1.temperature and drift velocity.
2. n0 p0 = ni2 where n0 and p0 are the electron and hole equilibrium carrier concentration and ni is the intrinsic carrier concentration.
4. it states that the product of the free electron concentration and the free hole concentration is equal to a constant which is equal to the square of the intrinsic carrier concentration.
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