Consider a piece of Si with a band structure as shown below. At each end of the

Question

Consider a piece of Si with a band structure as shown below. At each end of the sample, the energy difference between the Fermi level and the band edge is . Take

and neglect the mobility and mass difference between electrons and holes.

true or false, five. total

When we heat the left edge of the material, the Fermi Level increases:

- This answer is unanswered.

When we heat the left edge of the material, the diffusion currents do not change:

- This answer is unanswered.

When we heat the left edge of the material, the drift currents do not change:

- This answer is unanswered.

When we heat the left edge of the material, we induce a net current flow in the material:

- This answer is unanswered.

When we heat the left edge of the material, the material is no longer at equillibrium:

- This answer is unanswered.

Explanation / Answer

when we heat the i.e temperature of semiconductor increases fermi level decreases. so statement 1 is false

2) False( Raising the temperature will increase the thermal velocity of carriers,diffusion occurs faster at heigher temp)

3) False (drift velocity decreases as increase in temperature)

4) True

5) True

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