Underline all the correct answers. Explain why an answer is correct or why it is

ID: 1715694 • Letter: U

Question

Underline all the correct answers. Explain why an answer is correct or why it is wrong.

Problem 1. A Si Wafer is at 0K, the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

CB band is completely empty and VB is completely filled.
VB band is completely empty and CB is completely filled.
CB band is partially empty and VB is completely filled.
VB band is partially empty and CB is completely filled.
None of the above
All of the above (1-4)

(III)

CB band is partially filled and VB is completely filled.
VB band is partially filled and CB is completely filled.
CB band is partially empty and VB is partially filled.
VB band is partially empty and CB is partially filled.
None of the above
All of the above (1-4)

Problem 2. A Si Wafer is at 300K, the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Problem 3. A Si Wafer is at 500K (the material did not breakdown), the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Problem 4. If photons with energy of 0.7 eV was applied to A Si Wafer is at 0k (Eg for Si =1.12eV), the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Problem 5. If photons with energy of 0.7 eV was applied to A Si Wafer is at 300k (Eg for Si =1.12eV), the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Problem 6. If photons with energy of 1.7 eV was applied to A Si Wafer is at 0k (Eg for Si =1.12eV), the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Problem 7. If photons with energy of 1.7 eV was applied to A Si Wafer is at 300k (Eg for Si =1.12eV), the valence and conduction band are

(I)

Both are completely empty
Both are completely filled.
Both are partially empty.
Both are partially filled.
None of the above
All of the above 1-4.

(II)

(III)

Explanation / Answer

Problem:1

Ans- CB band is completely empty and VB is completely filled

Explanation:- At T=0 K ,conduction band will be empty as per the property of semiconductor.Conduction band only gets electron in when sufficient amount of threshold energy applied to jump an electron from VB to CB.At very temperature this semiconductor acts as an insulator which meas no electron can jump from VB to CB.

Problem:2

Ans-CB band is partially empty and VB is completely filled.

Explanation:-At 300k asemiconductor may receives sufficient energy for few electrons so that they may jump from VB to CB and will get back to VB as energy releases.This process cause some partially presence of electron in CB.

Problem:-3

Ans- VB band is partially filled and CB is completely filled

Explanation:-At 500K most the elctron jumps to the CB as they gain sufficient energy to travel from VB to CB. At very high temperature most of the bonds breaks down and generates free electrons and cause them to jump from VB to CB.

Problem:-4

Ans-CB band is completely empty and VB is completely filled.

Expalnation:- As the incident energy is less than the threshold energy,which no electron can flow from VB to CB.

Problem:-5

Ans-CB band is partially filled and VB is completely filled.

Explanation:-As the incident energy is less than the threshold energy,which no electron can flow from VB to CB but At this temperature(=300k) few of the elctron gains enough energy to jump from VB to CB and make a partial presence of electron in CB.

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