Question 1 and 2 Assuming that the mobility of electron in silicon at T = 300K i

Question

Question 1 and 2

Assuming that the mobility of electron in silicon at T = 300K is mu in = 1300 cm2/V-s, and the mobility is dominated by lattice scatting, determine the electron mobility at T = 200 K and T = 400 K, respectively. Find the electron and hole concentrations, mobilities, and resistivities of silicon samples at 300 K, for each of the following impurity doping concentrations: (1) 5 times 1015 cm-3 boron; (2) 2 times 1016 cm-3 Boron and 1.5 times 1016 cm-3 arsenic; (3) 5 times 1015 cm-3 boron, 1Times 1017 cm-3 arsenic, and 1 times 1017cm-3 gallium. (Mobilities can be looked up from the following plot. Note: when finding a particular mobility, the impurity concentration is the total doped concentrations, including the compensated impurities. This is understandable as the compensated impurities introduce scattering centers as well, which eventually affect the mobilities of electrons and holes.)

Explanation / Answer

mobility of electron s silicon propotional to (T)^-2.4 => mobility at T = 200 K = 1300 (200/300)^-2.4 = 3440 cm^2/vs => mobility at T = 400 K = 1300 (400/300)^-2.4 = 651.76 cm^2/vs

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