Please show all steps! Thanks Given: VDD = VSS= +3.5V, RD1 = 132k ohm, RS2 = 7.5

Question

Please show all steps! Thanks

Given: VDD = VSS= +3.5V, RD1 = 132k ohm, RS2 = 7.5k ohm, RG1 = l00k ohm. Vt1 = |Vt2| = 0.8V, kp = 80 mu A/V2, kn = 1.5kp, W2 = 30 mu m, L1 = L2 = 6 mu m, lamda 1 = lamda 2 = 0 V-1. Find: Find the values of W1 and RD2 that will yield V0 = 0 Volts and ID2= 200 mu Amps with both M1 and M2 in saturation. Hints: Dont forget that M1 is a NMOS device, but M2 is a PMOS device. For PMOS devices, some quantities are negative and the criteria for Triode. Saturation and Cutoff differs from NMOS devices. However, the equations for the drain current are the same for PMOS and NMOS. Table 4.1 on pages 260-262 can be helpful. The phrase Same relationships as for NMOS transistors except ... found near the top of page 262 within Table 4.1 is correct except that the very last equation at the end of Table 4.1 on page 262 is wrong. The drain current equation found at the bottom of page 260 in Table 4.1 applies to both NMOS and PMOS devices in saturation. Start by writing a KVL around the SD loop of M2. Note that V0 is the voltage from the drain of M1 to ground, its not the voltage across RD2 nor is it VDS2. Also write KVLs that take paths across the voltage V0, from the drain of M2 to ground and back through the ground side of a power supply, etc. Find the necessary voltage at the gate of M2 and work back towards M1.

Explanation / Answer

sol) transistor M2

writing KVL at V0

-Vss-Id*Rd2-V0=0

given V0= 0

substituting

Id*Rd2=-Vss

Rd2=Vss/Id=3.5/200micro = 17.5 K ohm

finding Vs = Id*Rs2 = 200micro*7.5k = 1.5V

for M2 to be ON Vgs-Vtp <= 0

taking min condition

Vg-Vs=Vt

Vg=Vt+Vs = 1.5+0.8 = 2.3V

from the figure

Vg = Vd of M1

therefore Id1 = (Vdd-Vd)/Rd1 = (3.5-2.3)/132k = 9.09 micro A

we know that

Id1 = 1/2 kn' W1/L1 (Vgs-Vt)^2

9.09 micro = 0.5*80*1.5 W1/6micro (3.5-0.8)^2

W1= 0.12 micro m

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