Hi, I\'m having trouble understanding this question. The fermi level in a Si sam

Question

Hi, I'm having trouble understanding this question. The fermi level in a Si sample maintained at T = 300 K is located at Ec - EG/4. Compute and plot the electron and hole distributions ( numbers / cm^3 - eV ) as a function of energy in the conduction and valence bands.

My problem is I dont know how to calculate the electron or hole concentrations. I think if i can get those I can plot without a problem, but this is driving me crazy. Any help or direction would be great.

For the electron concentration, i think you would integrate gc(E)*f(E)dE.... i don't know what my limits would be.... I wasn't given Ec or Ev, just the fermi level of Ec - EG/4. I know EG = 1.12 eV

Any help would be greatly appreciated, I just don't understand this.

Explanation / Answer

yes you would integrate Gc(E)*f(E)dE then take limits which are computed above

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