suppose we have a gate electrode on top of an insulating layer with a relative d

Question

suppose we have a gate electrode on top of an insulating layer with a relative dielectric contant of =3.9. suppose that insolating layer is 100nm thick. below the insulating layer is asemiconductor hooked up to a reservoir of charge. think of this device as a parallel plate capacitor, with one plate being the gate electrode and the other being the semiconductor interface with the insulator. how much positive voltage do we need to apply to the gate electrode to include an electron dencity at the semiconductor dielectric interface 1012 electron per cm2?

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