Question
An indication of saturation state of H/T is that V_CE = V_CC V_CE = 0 I_C = 0 V_BE = 0.7 V. A self-biased n-channel JFET has a V_D = 8 V, V_GS = -5 V. What is the drain-source voltage? Comparing the voltage gains between CE amplifier and CC amplifier, which of the following the correct order respectively? larger, zero, larger, unity smaller, larger smaller, smaller Consider a E-MOSFET of gate-source threshold of 5 V. Which of the following bias voltage the device into conduction? 4.3 V. 0 5 V -5 V When a zener diode is forward-biased, it conducts no current. exhibits a voltage drop of V_Z + 0.7 V. operates like a rectifier diode. emits visible light saturation and cutoff are operating conditions that are very useful when operating the transistor as a current amplifier a switch. a linear amplifier. None of the above. When a transistor is operated as a switch, how is collector current is limited to safe limits of the device? changing the base resistance. changing the base voltage. changing the base current. Changing he collector resistance. A MOSFET switch is turned on and off by changing the source voltage (T/F)? The gate-source junction of a JFET is a low resistance path for dc current when reverse-biased. normally forward-biased. normally reverse-biased. normally not biased. Where is the output signal obtained in a common-collector amplifier? Base emitter Drain Gate FETs are superior to BJTs in almost all switching applications (T/F)? A certain transistor is operate b using a fixed-bias mode, and has the following values: V_BB = 10 V, R_B = 100 k, and R_E = 0. What is the base current?
Explanation / Answer
1 Ans: A. VCE = VCC
2 Ans: In a self bias JFET VDs = VD + VGs = 8-5 = 3V
3 Ans: B Larger and Unity. The voltage gain of CE amp is Large and for CC amp it is Unity
4Ans: D . -5volts
5Ans:C. when a zener diode is forward biased it works like an ordinary PN junction diode
6Ans:B. As a switch
7Ans: D changing the collector resistance.
8Ans: False
9Ans: A. A low resistancepath for Dc current when reverse biased
10Ans: B. in a common collector amplifier the output is obtained at Emitter
11Ans:True. FET is more superior to BJT
12Ans; IB = VBB/RB = 10/100K = 0.1mA
