Which of the following statements is true? In a PN junction the depletion layer

Question

Which of the following statements is true? In a PN junction the depletion layer is formed only when an external voltage is applied To forward bias a PN junction, the voltage on the n-side should be around 0.7V higher thn the voltage on the p-side The small saturation current in a reverse-biased PN junction is due to thermally generated carriers In a forward-biased PN junction, breakdown can occur due to Zener or avalanche effect For small signals, a forward-biased diode behaves as a temperature-dependent resistor 1 and 3 2 and 4 3 and 5 2 and 5

Explanation / Answer

3 and 5 is true.

In 3rd ...diode behaves as open circuit in reverse biase ...but due to thermal energy some holes and electrons wil be there ...they are responsible for small saturation current .

In 5th for small signal...a forward bias diode will be a temperature depend resistor ..because ..we have the operating voltage is low ..and generation or holes and electrons ...is controlled by the temperature also.

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