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View Window TextEdit Due N2917 EE264 Homework Assignment Write a subroutine to d

ID: 2081279 • Letter: V

Question


View Window TextEdit Due N2917 EE264 Homework Assignment Write a subroutine to do the following: The inputs to the subroutine are a pointer in rerisler Y and an Rbit sumber in egister B Saning at the address in register Y.clear (set to 0 the number of bytes in memory corresp all registers, and it does sot have any return values. The subroutine should preserve Identify each of the following memory technologies: Volatile, requires periodic refresh does Rot require periodic refresh Non volatile programmed Non-volatile erakable using UV light ble (identify two) Diagram the atemory map of the following processor RAM. Flash, and reistens RAM starts at address so00,512 bytes Flash starts at addres ST00,4 khytrs Registers start at addses SE000, 12bits of address the memory map show the darting and ending aldressed RAM.Regislers, and Flash, Wha should be the initial value ofthe stack pointer when the processor

Explanation / Answer

2. Identify each of the following memory technologies:

a. Volatile, requires periodic refresh

Answer: DRAM

Explanation: it is one kind of a volatile memory.in directive to recollect the data in DRAM it should be refreshed periodically.

b. Volatile, does not require periodic refresh

Answer: SRAM

Explanation: it is volatile memory that does not feed to be refreshed periodically it is opposite for DRAM it comprises transistors and holds the data as long as power supply is passed data is measured to be enduring while power is on in the system

c. Non-volatile, programmed once

Answer: FROM

Explanation: it is also known as one time a programmable nonvolatile memory once programmed is stored permanently

d. Non-volatile, erasable using UV light

Answer: EROM

Explanation: It is read only memory that can be erased through ultra violet rays or light and can be re used

e. Non-volatile, electrically erasable (identify two)

Answer: EEPROM

Explanation: it is nonvolatile memory whose contents can be erased using electrical pulse voltage and can be programmed