How can I calculate the r output and the early effect 2N5457, 2N5458 JFETs Gener

Question

How can I calculate the r output and the early effect

2N5457, 2N5458 JFETs General Purpose N-Channel Depletion N-Channel Junction Feld Ettect Tranststors, depletion mode Type A designed for audio and switching applications. Features N-Channel for Higher Gain Drain and Source Interchangeable High AC Input Impedance High DC Input Resistance Low Transfer and Input Capacitance Low Cross-Modulation and Intermodulation Distortion Plastic Encapsulated Package e Pb-Free Package MAXIMUM RATINGS Raning Symbol Value Unit loperating Junction Temperature T 135 IBIoage Temperature Range to 150 exceeding Maximum Ratings may damage the device. Maximum Ratings are at atinga only Functional operation above the Recommended operating Condit not implied. Extended expos Recommended operating Condit may affect devi reliabilty. For addition information on our Pb-Free strategy and soldering details, please ng and Mounting Techniq eference Manual, SOLDERRM ON ON Semiconductor http GATE 2 SOURCE MARKING DIAGRAM STRAIGHT LEAD BULK PACK AMMO PACK OASE 29 2N545x Device Code 7 or 8 ARaembly Location Work Week Pb-Free Package (Note Microdot may be in either location) ORDERING INFORMATION Device Package Shipping ELECTRICAL CHARACTERISTICS Gate-Bo Breakdown Voltage Gate Reverse Current Vas Cutof voltag 5 Vdc, io Votage 00 ILAdc) (Mo 5 Vdc, io 200 HAdc) Zero-Gate-Votage Dri Current Nat DYNAMIC CHARACTERISTICS ater Admit 5 Vdc. Output Admitano Common Souroe Note input Capacit Revere Tranafar Capactance Pulae Width S600 Duty Cycl 2N5457, 2N5458 20"C unless otherwiae noted Symbol Min Typ Max Unit NS457 N54 N545

Explanation / Answer

In the above question we can have the various data :

value of VDS ( drain-source volt )

value of VGS ( gate-source volt )

value of ID ( drain current )

all the above mentioned parameter can be determined from the graphs.

Early Effect - It is the effect that drain voltage has on drain current. and it is non-ideal in nature .

We know JFET are voltage controlled current source where the controlling voltage is VGS ie voltage between gate and source and ideally the current does not depend on what voltage is applied at drain, but this is not what was found experimentally. It was found that there is some dependance.

So the early effect can be calculate by taking response form the graph shown betwwen ID and VGS .

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