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(2) What percentage of the boule or ingot actually ends up in wafer form? a. b.

ID: 2265831 • Letter: #

Question

(2) What percentage of the boule or ingot actually ends up in wafer form? a. b. C. d. 30% 50% 70% 90% The patterning and shaping in microfabrication are usually accomplished through what? a. b. (2) Which is not a function of carrier mobility? a. Temperature b. Doping Concentration c. Magnetic field d. Electric Field (2) How much of the silicon substrate is consumed during thermal oxidation growth? a. (2) Silicon exhibits what type of bandgap structure which makes it difficult to use as a photonic material? a. (2) What are the two principle silicon crystal orientations used in manufacturing IC's today? a. b. 2) The CZ growth process inherently introduces O and C; however, the O in CZ silicon often forms small Sio n the Si crystal under normal processing conditions. The precipitates can actually be useful. How? a. They trap unwanted Na+ atoms in the wafer b. Help create the starting points for oxide film growth c. Provide mechanical strength & internal gettering d. Enhances the electrical properties in the wafer 3) What are the two primary devices made in silicon and which device has become the dominant one in the past 30 b. he maximum concentration of a dopant that can be dissolved in bulk Si under equilibrium conditions, without forming another phase is called what? a.

Explanation / Answer

1) The boule ends up only 50% in the wafer form.

2)The patterning and shaping in microfabrication is usually achieved through photolithography.

3)Temperature is not a function of carrier concentration.

4)46% of the silicon substrate is consumed during thermal oxidation growth.