2. For conducting electrons: a. Conventional current due to the electrons is in

Question

2. For conducting electrons: a. Conventional current due to the electrons is in the same direction of electron flow. b. Conventional current due to the electrons is in the opposite direction of electron flow. c. Conducting electrons do not make up currents in semiconductors. d. None of the above 3. One strategy to make a silicon wafer with po-2x101 /cm2 is to: a. Dope it with arsenic so that ND-2x101/cm 16 cm c. Dope it boron so that NA-2x1016/cm3 d. Both B&C; will do the job. 4. The valence band edge (Ev) is: a. In the middle of the energy gap. b. The lowest energy in the valence band. c. The highest energy in the valence band. d. Is the same as the energy gap.

Explanation / Answer

2. (B) Conventional current is in the direction opposite to the direction of flow of electrons.

3. (D) Both b and c will do the job.

4. (C) Valence Band(Ev) is the highest energy level in the valence band.

13. (D) Drift current is due to external bias.

14. (B) P-type. As, the doping density is more of Trivalent Impurity.

15.(B) Majority charge cariers are charge in the valence band.

16.(D) Acceptors are Boron.

17.(C)Minority carriers are P0 = 3 x 1016

18.(A) N0 = 75,000/cm3.

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