(a) (2 pts) (h) (2 pts) (e) (2 pts) (e) (4 points) For the p-type semiconductor
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Question
(a) (2 pts) (h) (2 pts) (e) (2 pts) (e) (4 points) For the p-type semiconductor substrate of MOS capacitor, in order to create electron inversion layer, the gate voltage has to be in the following Less than threshold voltage Larger than threshold voltage . L.ov .L.OV Answer the following questions given the capacitance-voltage curve below for an Si-siO, MOS capacitor with area of 1.104 em?, 10 pF (d) (4 points) This is a high-frequency CV curve. The low-frequency inversion capacitance would be V Changes in charge on the metal are balanced by generation and recombination in the inversion lay . Changes in charge on the metal are balanced by majority carriers moving into and out fr ge on the metal are balanced by expansion and contraction of the depletion regio than the high-frequency value that is shown because accumulation layerExplanation / Answer
c) For P type Substrate to create inversion layer gate voltage has to be larger than the threshold voltage.
d) Low Frequency Inversion Capacitance is larger than High Frequency Inversion Capacitance because Change in Charge on the metal are balanced by generation recombination in the inversion layer.
Discription of d)
Inversion Layer Capacitance at low frequency is higher because at this frequency minority carriers are able to respond quicky with change in gate bias and results in higher capacitance compared to higher frequency.
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