(12 pts) 12. Consider the C-V characteristic below for a silicon MOS capacitor 0
ID: 2266330 • Letter: #
Question
(12 pts) 12. Consider the C-V characteristic below for a silicon MOS capacitor 0. iV I. (5 pts) Consider the bias points 1, 2, 3, 4, 5 shown on the C-V curve. Complete the following table Bias Condition Capacitance ( Accumulation etion Inversion Flat band etion Inversion Transition II. (1 pts) Is this an n-channel or p-channel device? n-channel orp-channel . (2 pts) Is this high or low frequency measurement? High frequency or Lowfrequency IV. (2 pts) What is the threshold voltage for this device? V. (2 pts) When an MOS capacitor is biased into inversion, the source of the inversion layer charge 1S, a. The contact to substrate b. Leakage current from the gate c. Generation in or within a diffusion length of the depletion regiorn d. Depletion of the majority carriers leaves behind minority carriers in the inversion regionExplanation / Answer
I. Accumulation: Cox , Depletion: CoxCdep / Cox + Cdep, Inversion: Cox , Flatband: the capacitance is maximum, At the transition the capacitance increases.
II. P-channel.
III. High frequency measurement(because is no more accumulation of charges and hence the capacitance remains at Cmin).
IV. Threshold voltage is the minimum voltage required between gate and source terminals to accumulate sufficient number of carriers in order to form a channel(i.e. inversion). Here it is -1V.
V. a) The contact to substrate. P mosfet has substrate made of n type Si, inversion means generation of holes in the n substrate so the source is the n substrate itself.
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