2) True or False: Silicon cannot be used to make a good light emitter because it
ID: 2266508 • Letter: 2
Question
2)
True or False: Silicon cannot be used to make a good light emitter because it is an indirect gap material.
True or False: Lasers are different from LEDs in that their emission spectrum is much more narrow and there is a threshold at which light intensity begins to increase dramatically as current increases.
True or False: Wearing gloves when handling silicon wafers was a critical practice to enable manufacturing of reliable integrated circuits because it prevented sodium from causing threshold voltage shifts in MOSFETs.
True or False: Heterojunction bipolar transistors (HBTs) have higher switching frequencies than simpler npn bipolar junction transistors (BJTs) because their larger valence band edge discontinuity reduces hole injection back into the emitter, and this allows higher base doping and smaller RC time constants associated with base charging time.
True or False: gold doping of the base region increases silicon BJT switching frequency because gold impurities act as minority carrier recombination centers and this results in shorter minority carrier lifetimes that reduce turn off transient times.
Electrons are sub-atomic particles that
a)Have a negative charge
b)Can be described mathematically by a wavefunction
c)Can penetrate thin potential barriers
d)All of the above
e) None of the above.
Explanation / Answer
1) True
yes, Silicon cannot be used to make a good light emitter because it is an indirect gap material.
2) True
yes, Lasers are different from LEDs in that their emission spectrum is much more narrow and there is a threshold at which light intensity begins to increase dramatically as current increases
3)True
yes, Wearing gloves when handling silicon wafers was a critical practice to enable manufacturing of reliable integrated circuits because it prevented sodium from causing threshold voltage shifts in MOSFETs
4)True
yes, Heterojunction bipolar transistors (HBTs) have higher switching frequencies than simpler NPN bipolar junction transistors (BJTs) because their larger valence band edge discontinuity reduces hole injection back into the emitter, and this allows higher base doping and smaller RC time constants associated with base charging time
5)False,
NO, gold doping of the base region does not increase silicon BJT switching frequency
6) All of the above
the electron has a negative change, it can be described mathematically by a wave function and it can penetrate thin potential barriers.
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