3. Circuit the correct answer- TRUE/FALSE [30 points] 1) SRAM has destructive re

Question

3. Circuit the correct answer- TRUE/FALSE [30 points] 1) SRAM has destructive read operation [TRUE/FALSE] 2) SRAM cell require periodic refresh operation [TRUE/FALSE] 3) Writing to an SRAM cell is harder than writing to a latch [TRUE/FALSE] 4) Reading the value stored in an SRAM cell requires DOES not require determining the exact currents in left and right bitlines of the column [TRUE/FALSE] 5) Solid-state drives are faster than SRAM cells [TRUE/FALSE] 6) Magnetic drives are non-volatile memory [TRUE/FALSE]

Explanation / Answer

1. Only write operation is destructive. so, "false"

2. SRAM does not require data to refreshed. so, "False".

3. One has to spend energy to rotate the domains to flip their magnetic directions and therefore they consume energy in writing them even if it is very small. so, "True".

4. The SRAM, static ram memory cell is a type of flip-flop circuit, usually implemented using FETs. These require very low power to keep the stored value when not being accessed. so, "True".

5. True, Solid state drives are faster than SRAM cells.

6. True, Magnetic drives are non volatile memory.

Note :- Have any doubt ?? ask in comments !! :)

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