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a) The \"small signal input voltage range for a MOSFET amplifier, which will pro

ID: 2292862 • Letter: A

Question

a) The "small signal input voltage range for a MOSFET amplifier, which will produce linear output voltage, is determined by the thermal voltage(Vamat" kT/Q). TRUE FALSE b) There are more free moving electrons than holes inside intrinsic semiconductor TRUE FALSE e) In a piece of uniformly doped N-type semiconductor, diffusion current is the dominating current TRUE FALSE d) The depletion region of a PN junction is formed due to i. reverse biasing ii. forward biasing ili. migration of mobile charge carriers . photoelectric effect e) The width of depletion region of PN junction is increased when doping level is increased. TRUE FALSE f) Nonlinearity in an amplifier reduces high frequency components in the system 8) The common-mode rejection ratio of an ideal op amp is zero. h) When BJT base region width is increased, transistor B is increased i) When PN junction is reversed biased, the junction capacitance value is maximized TRUE FALSE TRUE FALSE TRUE FALSE TRUE FALSE j) When forward biased, Zener diode behaves exactly like a Schotky diode. TRUE FALSE Version Alpha (Page 12)

Explanation / Answer

a. False

b. False, in intrinsic semiconductor free electron concentration is same as free hole concentration.

C. False, if semiconductor is uniformly doped then there is no concentration gradient and no diffusion of charge carriers.

D. iii (migration of mobile charge carriers)

E. False, width of depletion region decreases with increase in doping concentration.

F. False

G. False, CMRR of ideal opamp is infinite.

H. False, if base width increases then common base current gain (alfa) decreases hence beta also decreases.

I. False, in reverse bias, depletion region width increases hence junction capacitance decreases, hence it can not be maximum.

J. False, in forward bias zener diode behaves as normal diode.