Wax score x Score: 1 1) Metal Oxide Semiconductor Field Effect Transistor 2) In
ID: 2293061 • Letter: W
Question
Wax score x Score: 1 1) Metal Oxide Semiconductor Field Effect Transistor 2) In NMOS transistor, source (S) injects the free chas (MOSFET) Is a symmetric device. T/IF arge carrier (electrons) to the channel charge TIF TIF TIF TIF channel in order to flow th ransistor, drain o) injects the free charge carriers (holes) to the 3) In saturation mode, MOSFET a current 4) BJTs have usually larger transconductance gain G- 5) At pinch-off point in MOSFETs, the drain current (ID) acts like a current controlled current source. uctance gain (gm) than that of MOSFETs. TExplanation / Answer
1) True- MOSFET is a symmetric device, because we can use drain and source terminal interchangeably.
2)False- in n mosfet p- type substrate is used, when positive VGS is applied to the gate terminal then holes in the p type substrate get repelled and electrons from both drain and source terminal gets attracted to form channel, which leads to flow current.
3) False- MOSFET is a basically voltage controlled, as input voltage is applied at the gate terminal. In saturation mode MOSFET acts as Voltage controlled Current source(VCCS), as input applied is voltage and due to this current is flowing.
4) True- in BjT gm= IC/VT and for MOSFET gg=2Id/(vgs-Vt). For bjt VT is constant and for MOSFET VGS is variyng. If we consider 1mA as Id and Ic and Vgs-Vt as 100mv then we will find that transconductance of bjt will be higher as compared to MOSFET. Therefore bjt is faster as compared to mosfet.
5) False- at pinched off drain current remains constant.
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