27. Which statement is valid? a) The saturation current mechanism for Schottky,

Question

27. Which statement is valid? a) The saturation current mechanism for Schottky, diodes is fundamentally the same as that for p'-n junction. b) The saturation current mechanism for Schottky diodes is fundamentally different from that for p'-n junction. c) The saturation current mechanism for Schottky diodes is fundamentally the same as that for n'-p junction. d) The saturation current mechanism for Schottky diodes is fundamentally different from that for n'-p junction. 28. For Schottkx diodes, which statement is valid? a) The current equation is-J kT b) The saturation current equation is = A"T2 exp-rat) kT c) A is Richardson constant in A/K2-cm2 d) For n-Schottky diodes, there is a very small diffusion current component where L,N 29. Which statement is valid? a) An ghmic contact can be a Schottky. contact with very small barrier height. b) Obmic contact is characterized by the value of specific contact Re c) Ohmis contact is a rectifying contact. 30. Which statement is valid? a) metal on top of heavily doped semiconductor forms an ohmic contact. b) The current transport for the metal/heavy doped semiconductor is by diffusion. c) The current transport for the metal/heavy doped semiconductor is by tunneling. d Re in case of tunneling between metal and semiconductor. ) RC.sp. ? hjwD in case of tunneling between metal and semiconductor

Explanation / Answer

27:- (b)

Schottky diodes are different from pn diode in characteristics in normal diode saturation starts from 0.3-0.7 where in schottky less then 0.3

28:- (a)

29:- (a)

ohmic contact is different from schottky contact but an ohmic contact can be a schottky contact with small barrier height

30:-(a)

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