Please provide steps and solution. Thank you. Question #1 (50 points): A particu

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Please provide steps and solution. Thank you.

Question #1 (50 points): A particular application requires that Mi in Circuit #1 operates in saturation with ip mA. The transistor properties are as follows: Kn 50 HANV WIL 20, appropriate value of R1 and determine the largest possible value of RD. Question #2 (50 points): Circuit #2 with VDD 15 V and RDE 3 k2 was designed to bias M2 in the triode region with (VGs VT) 10VDs. The process technology used to fabricate M2 gives an inversion channel of about 1 um in length with Ki 60 LLA/V2, ViN +1 V, 0, and y 0. What is the smallest allowable value of gate width for this transistor? VDD DD RD I M

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