2.32 Calculate the electron concentration in a doped silicon if the Fermi level
ID: 3162480 • Letter: 2
Question
2.32 Calculate the electron concentration in a doped silicon if the Fermi level is as close to the top of the valence band as to the midgap. What is the hole concentration?ANSWERS: n0=2.66x10^5, p0=3.9x10^14, p-type
Find n0, p0, and whether it's p-type or n-type
The answers are given but I don't know how to solve 2.32 Calculate the electron concentration in a doped silicon if the Fermi level is as close to the top of the valence band as to the midgap. What is the hole concentration?
ANSWERS: n0=2.66x10^5, p0=3.9x10^14, p-type
Find n0, p0, and whether it's p-type or n-type
The answers are given but I don't know how to solve Calculate the electron concentration in a doped silicon if the Fermi level is as close to the top of the valence band as to the midgap. What is the hole concentration?
ANSWERS: n0=2.66x10^5, p0=3.9x10^14, p-type
Find n0, p0, and whether it's p-type or n-type
The answers are given but I don't know how to solve
Explanation / Answer
The fermi energy level for a P-type semiconductor is given by
Ef = [(Ev +Ea ) /2] - KT/2 [ln Na/2(2m*hKT/h2)3/2]
At 0 K , Ef = [(Ev +Ea ) /2]
The energy gap for silicon Eg = 1.1 ev
At 0K, Fermi level is exactly at the middle of the acceptor level on the top of the valence band.
In case of trivalent doping, in which holes are the majority charge carriers,
the fermi level shifts towards the valence band
In case of pentavalent doping, where electrons are the majority charge carriers, the fermi level
shifts towards conduction band.
Since in this particular example, as the fermi level is towards valence band, it can be considered
as a p-type semiconductor.
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