1. Semiconductor Device Physics (40 pts): Mark below if the statement is true or
ID: 3280034 • Letter: 1
Question
1. Semiconductor Device Physics (40 pts): Mark below if the statement is true or false (2pts each) True False Statement FN (Fowler-Nordheim) tunneling dominates when the electric field is high. In the linear region of lds-Vds curve, the mobility varies with electrical bias voltage In a LED, the light is generated mostly near the depletion region edge The MOS capacitor (S: p-type) has a positive bias on metal (M) in accumulation mode If quantum effects dominate, the threshold voltage increases as the channel length decreases A reverse-bias helps increase the guantum efficiency of the photo-detector One of the main challenges in MuGFET is that source and drain series resistance is too low If N atoms interact, the single energy level is split into N different energy levels Higher electrostatic coupling between gate and channel leads to larger device current (s) We can minimize the CMOS inverter delay by decreasing W/L of the MOSFET For Si, the number of total energy bands for core electrons is 2 dE/dx (spatial variation of Fermi energy) is equal to zero inside the depletion region DIBL (drain-induced barrier-lowering) does not affect the MOSFET on-current At V,-Vth, the surface potential at the oxide/channel interface is equal to 2-1 E- For the modern transistor with the sidewall, technology node (F) is smaller than metal half-pitch The quantum charge density in the MOSFET channel is peaked at oxide/channel interface I a roves biased P/N diode, a ne bias is aupliced io a p iype snicoucir side For Sio2, EOT (equivalent oxide thickness) is larger than its physical thickness.Explanation / Answer
1. False
2. False
3. True
4. True
5. True
6. True
7. True
8. True
9. False
10. False
11. False
12. False
13. True
14. False
15. False
16. True
17. True
18. False
19. True
20. False
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