b. Homework #3 Begin Date: 2/7/2018 12:01:00 AM-Due Date: 2/11/2018 11:59:00 PM
ID: 3308196 • Letter: B
Question
b. Homework #3 Begin Date: 2/7/2018 12:01:00 AM-Due Date: 2/11/2018 11:59:00 PM End Date: 2/16/2018 12:00:00 AM (14%) Problem 5: As part of the design process for a new transistor, an engineer uses a vacuum chamber to bombard a thin layer of silicon with ions of phosphorus, each of mass mp 5.18 x 1026 kg. The phosphorus ions are doubly ionized, with each phosphorus ion lacking two electrons. The ions start at rest at one end of the vacuum chamber and are accelerated by an electric field over a distance of re-31 cm before they strike the silicon layer with velocity vp 120 m/s. Randomized Variables re-31 cnm vp= 120 m/s > 33% Part (a) Enter an expression for the potential difference V, in volts, between the initial and final points across the vacuum chamber Grade Summai Deductions Potential 4% 96% 7 8 9 HOME Submissions Attempts remaining: 8 % per attempt) detailed view Im mp END 200 2% Vp BACKSPACE DEL CLEAR Submit Hint I give up! Hints: 0% deduction per hint. Hints remaining: 3 Feedback: 0% deduction per feedback. 33% Part (b) Calculate the average electric field strength E, in volts per meters, across the vacuum chamber 33% Part (c) Calculate the average electric force F, in newtons, that the electric field exerts on each phosphorus ionsExplanation / Answer
(a) delta(KE) = q deltaV
mp vp^2/ 2 = (2e) deltaV
deltaV = mp vp^2 / (4 e)
(B) E = deltaV / d
= mp vp^2 / (4 e re)
putting values,
E = 1.88 x 10^-3 V/m Or N/C
(c) F = q E = 6.02 x 10^-22 N
Related Questions
Navigate
Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.