d) the efficiency of this device can reach 100%. 12. For Gunn diodes, a) Silicon
ID: 3348664 • Letter: D
Question
d) the efficiency of this device can reach 100%. 12. For Gunn diodes, a) Silicon can be used to build Gunn diodes. b) GaAs, INP, and ZnSe can be used to build Gunn diodes. c) Any material with negative differential conductivity can be used build Gunn diodes. d) Transferred Electron Diodes (TED) are different from Gunn diodes. 13. For TED diodes, a) The device has high mobility at low voltage and low mobility at high voltages. b) IMPAT has low efficiency than TED c) TED provide lower noise and lower operating voltages than IMPATT diodes. d) IMPAT has simpler circuit design. 14. For TED diodes, a) The conduction band has 2 valleys, separated by an energy AE. b) To have a NDR, the lattice temperature must high. e) The lower valley must have low mobility and the higher valley must have high mobility. d) AE time constant b) The condition for the device operation is LnoExplanation / Answer
12.
a) silicon cannot be used to build gunn diodes because silicon does not have negative resistance region.
b) elements from 3rd group and 5th group are suitable and used to build the gunn diode. so GaAs, InP and ZnSe can be used,
c) The requirement for any material used to build gunn diodes is negative differential conductivity, only materials having negative resistance region can be used to build gunn diodes.
d) No Gunn diodes are also known as transferred electron devices due to transfer of electrons from lower valley to upper valley
13.
a) For TEDs, at lower voltages the electrons have higher mobility as the voltage increases electrons tranferred to upper valley and there they have lower mobility.
b) IMPATT diodes are more efficient and more powerful than Gunn diodes.
c) TED provide lower noise and lower operating voltages than IMPATT diodes.
d)gunn diode has simpler circuit
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