8, a. what is the difference between DRAM and SRAM in terms of application and c
ID: 3718570 • Letter: 8
Question
8, a. what is the difference between DRAM and SRAM in terms of application and characteristics (speed, size and cost)? b. Explain why one type of RAM is considered to be analog and the other digital, c. What are some applications for ROM? d. What are the differences among EPROM, EEPROM, and flash memory? e. What is Hamming Error-Correcting Code. How does SDRAM differ from ordinary DRAM? f. Design a 16-bit memory of total capacity 8192 bits using SRAM chips of size 64 1 bit. Give the array configuration of the chips on the memory board showing all required input and output signals for assigning this memory to the lowest address space. The design should allow for both byte and 16-bit word accesses. g. The memory of a particular microcomputer is built from 64K 1 DRAMs. According to the data sheet, the cell array of the DRAM is organized into 256 rows. Each row must be refreshed at least once every 4 ms. Suppose we refresh the memory on a strictly periodic basis. i. What is the time period between successive refresh requests? ii. How long a refresh address counter do we need? 9. a. What are the advantages of using a glass substrate for a magnetic disk? b. How are data written and read onto/from a magnetic disk? c. What common characteristics are shared by all RAID levels? Describe the seven RAID levels with appropriate illustrations. Explain the term striped data. How is redundancy achieved in a RAID system? d. Consider a 4-drive, 200GB-per-drive RAID array. What is the available data storage capacity for each of the RAID levels 0, 1, 3, 4, 5, and 6? d. Consider a single-platter disk with the following parameters: rotation speed: 7200 rpm; number of tracks on one side of platter: 30,000; number of sectors per track: 600; seek time: one ms for every hundred tracks traversed. Let the disk receive a request to access a random sector on a random track and assume the disk head starts at track 0 i. What is the average seek time? ii. What is the average rotational latency? iii. What is the transfer time for a sector? iv. What is the total average time to satisfy a request?Explanation / Answer
8)a)Answer:
The characteristics of DRAM and SRAM can vary. DRAM cells are more dense and smaller, while SRAM are spacious and larger. DRAM requires refresh circuitry, while SRAM does not. DRAM is used mainly for main memory, and SRAM is used for cache memory. DRAMS are low-cost when compared to SRAM. Finally, SRAM is faster than DRAM.
DRAM:
->Dynamic random-access memory is a type of random-access memory that stores each bit of data in a separate capacitor within an integrated circuit.
->Main memory in a computer (e.g. DDR3). Not for long-term storage.
->1GB to 2GB in smartphones and tablets; 4GB to 16GB in laptops
SRAM:
Static random-access memory is a type of semiconductor memory that uses bistable latching circuitry to store each bit. The term static differentiates it from dynamic RAM (DRAM) which must be periodically refreshed
->L2 and L3 cache in a CPU
->1MB to 16MB
->Present on Processors or between Processor and Main Memory.
b)Answer:
DRAM is considered analog due to the use of discharging capacitors, while SRAM is digital due to its flip-flop logical-gate configuration.
c)Answer:
Some applications of ROM:
Microprogrammed control unit memory; library subroutines for frequently wanted functions; system programs; function tables.
Library subroutines for frequently wanted functions
• System programs
• Function tables
d)Answer:
EPROM is read and written electrically; before a write operation, all the storage cells must be erased to the same initial state by exposure of the packaged chip to ultraviolet radiation. Erasure is performed by shining an intense ultraviolet light through a window that is designed into the memory chip. EEPROM is a read-mostly memory that can be written into at any time without erasing prior contents; only the byte or bytes addressed are updated. Flash memory is intermediate between EPROM and EEPROM in both cost and functionality. Like EEPROM, flash memory uses an electrical erasing technology. An entire flash memory can be erased in one or a few seconds, which is much faster than EPROM. In addition, it is possible to erase just blocks of memory rather than an entire chip. However, flash memory does not provide byte-level erasure. Like EPROM, flash memory uses only one transistor per bit, and so achieves the high density (compared with EEPROM) of EPROM
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