5. ROM properties. (10 points) - more than one match possible for some features

Question

5. ROM properties. (10 points) - more than one match possible for some features but pick only one A. Mask ROM E. Flash ROM I. Magnetic core J. Fast Page Ram B. Programmable ROM C. EPROM F. EDO-RAM D. EEPROM H. SDRAM G. BEDO-RAM K. Dynamic Ram L. Static Ranm Memory controller specifies single row address followed by up to 4 column addresses to provide improved read speed. Data read/write completed before next columrn addressed "Programmed" by repeated exposing different parts of the semiconductor material to different chemicals resulting in 'bits' and connections being permanently created in the surface of the chip. Destructive read, but can maintain store value even without power. Uses either NOR gate technology which can be read like ram memory (byte addressable) or NAND gate technology which is read at block level like a hard drive Uses burnable "fuses that can be blown to set bit to "zero" . Technology also used in programmable logic arrays. Uses transistor flip-flops requiring constant power to keep stored bit. Erasable using ultraviolet light. Uses very small capacitor storage cells requiring regular refresh of the stored bit. Programmable and erasable at the byte level using a higher than working level Uses isolated floating gate to set/clear bit. Allows controller to specify a single row address followed by up to 4 column addresses to provide improved read speed. Memory controller addresses next column while data read/writes completes.

Explanation / Answer

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Solution:

The first four subparts have been answered as per Chegg guidelines, please repost others.

EDO-RAM

Memory controller specifies single row address followed by up to 4 column

addresses to provide improved read speed. Data read/write completed before next column

addressed.

Programmable ROM

"Programmed" by repeated exposing different parts of the semiconductor material

to different chemicals resulting in 'bits' and connections being permanently created in

the surface of the chip.

EPROM

Destructive read, but can maintain store value even without power.

Flash ROM

Uses either NOR gate technology which can be read like ram memory (byte

addressable) or NAND gate technology which is read at block level like a hard drive.

BEDO-DRAM

Uses burnable "fuses" that can be blown to set bit to "zero". Technology also

used in programmable logic arrays.

EPROM

Erasable using ultraviolet light.

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