Chapter 5 - SHORT ANSWER In earlier computers the most common form of random-acc
ID: 3823174 • Letter: C
Question
Chapter 5 - SHORT ANSWER
In earlier computers the most common form of random-access storage for computer main memory employed an array of doughnut-shaped ferromagnetic loops referred to as __________.
RAM, ROM, PROM, EPROM, EEPROM, and flash memory are all examples of ___Non-Volatile_______ memory types.
A _________ RAM is made with cells that store data as charge on capacitors.
A __________ RAM is a digital device that uses the same logic elements used in the processor.
Three common forms of read-mostly memory are: EPROM, EEPROM, and _________.
A __________ failure is a permanent physical defect so that the memory cell or cells affected cannot reliably store data but become stuck at 0 or 1 or switch erratically between 0 and 1.
A __________ error is a random, nondestructive event that alters the contents of one or more memory cells without damaging the memory.
The simplest of the error-correcting codes is the _________ code.
One of the most widely used forms of DRAM is the _________ DRAM.
The two distinctive types of flash memory are designated as NOR and ______ .
___________is a new type of Magnetic RAM, which features non-volatility,fast writing/reading speed, and high programming endurance and zero standby power.
__________ works by creating resistance rather than directlystoring charge.
A new version of SDRAM, referred to as __________, can send data twice per clock cycle, once on the rising edge of the clock pulse and once on the falling edge.
The traditional __________ chip is constrained both by its internal architecture and by its interface to the processor’s memory bus.
A typical DRAM pin configuration will include the __________ pin if necessary in order to have an even number of pins.
Explanation / Answer
In earlier computers the most common form of random-access storage for computer main memory employed an array of doughnut-shaped ferromagnetic loops referred to as CORES.
RAM, ROM, PROM, EPROM, EEPROM, and flash memory are all examples of Read Only Non-Volatile primary memory types.
A Dynamic(DRAM) RAM is made with cells that store data as charge on capacitors.
A Static(SRAM) RAM is a digital device that uses the same logic elements used in the processor.
Three common forms of read-mostly memory are: EPROM, EEPROM, and FLASH MEMORY.
A HARD failure is a permanent physical defect so that the memory cell or cells affected cannot reliably store data but become stuck at 0 or 1 or switch erratically between 0 and 1.
A SOFT error is a random, nondestructive event that alters the contents of one or more memory cells without damaging the memory.
The simplest of the error-correcting codes is the PARITY code.
One of the most widely used forms of DRAM is the Synchronous DRAM.
The two distinctive types of flash memory are designated as NOR and NAND .
STT-RAM is a new type of Magnetic RAM, which features non-volatility,fast writing/reading speed, and high programming endurance and zero standby power.
ReRAM works by creating resistance rather than directlystoring charge.
A new version of SDRAM, referred to as DDR (Double Data Rate), can send data twice per clock cycle, once on the rising edge of the clock pulse and once on the falling edge.
The traditional DRAM chip is constrained both by its internal architecture and by its interface to the processor’s memory bus.
A typical DRAM pin configuration will include the no connect pin if necessary in order to have an even number of pins.
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