Difusion - mass transfer / chemical engineering SiO2 is formed by the reaction b

Question

Difusion - mass transfer / chemical engineering
SiO2 is formed by the reaction below: Si (s) + O2 (g) -> SiO2 (s), occurring on a flat surface (wafer) of Si. The molecular oxygen (O2), species (A) dissolve in SiO2 (s) and diffuses through the oxide film and then reacts with Si at the interface Si/SiO2. Develop an equation to calculate how the film thickness of SiO2 () varies over time, from the following considerations:
A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all te steeps for each sentences. Difusion - mass transfer / chemical engineering
SiO2 is formed by the reaction below: Si (s) + O2 (g) -> SiO2 (s), occurring on a flat surface (wafer) of Si. The molecular oxygen (O2), species (A) dissolve in SiO2 (s) and diffuses through the oxide film and then reacts with Si at the interface Si/SiO2. Develop an equation to calculate how the film thickness of SiO2 () varies over time, from the following considerations:
A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all te steeps for each sentences. Difusion - mass transfer / chemical engineering
SiO2 is formed by the reaction below: Si (s) + O2 (g) -> SiO2 (s), occurring on a flat surface (wafer) of Si. The molecular oxygen (O2), species (A) dissolve in SiO2 (s) and diffuses through the oxide film and then reacts with Si at the interface Si/SiO2. Develop an equation to calculate how the film thickness of SiO2 () varies over time, from the following considerations:
A) The oxidation process is controlled by the diffusion of O2 through the dioxide film. B) The process occurs in pseudo permanent regime C) ya=yas=cte. On the surface of the oxide film is exposed to oxygen (x=0) D) ya=0 on the surface Si/SiO2 (x=) Show all te steeps for each sentences.

Explanation / Answer

Ethanol is diffusing through a 4-mm stagnant film of water. The ethanol concentrations of the entrance and the existing planes are maintained at 0.1 and 0:02 mol/m3, respectively. If the water film temperature is 283 K, determine the steady-state molar flux of the ethanol and the concentration profile as a function of the position z within the liquid film. Compare these results with a 4-mm stagnant film of air at 283 K and 1 atm at the same entrance and exit ethanol concentrations.

  SiO2 layers of precisely controlled thickness are produced during IC fabrication by reacting Si with either oxygen gas or water vapor at an elevated temperature. In either case the oxidizing species diffuses through the existing oxide and reacts at the Si–SiO2 interface to form more SiO2. The relevant overall reactions are Si + O2 SiO2 (3.2.1a) Si + 2H2 O SiO2 + 2H2

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