Silicon Carbide (SiC) is a ceramic material with the so-called zincblende crysta

Question

Silicon Carbide (SiC) is a ceramic material with the so-called zincblende crystal structure. It
can be constructed from the FCC unit cell using a two-atom basisconsisting of a Si atom at
(0,0,0) and a C atom at (¼, ¼ , ¼).
(a) Calculate the percent ionicity of the Si-C bond. Does a dipoleform from the Si-C bond?
(b) Determine the number of Si atoms and the number of C atomscontained in each SiC unit
cell.
(c) The lattice parameter for SiC in the zinc blende form is0.43596 nm. Determine the
theoretical density of SiC.

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