9. Growth of Si single crystal can be done by a) chemical reaction b) pulling a
ID: 1730434 • Letter: 9
Question
9. Growth of Si single crystal can be done by a) chemical reaction b) pulling a seed immersed in a polysilicon melt while rotating the ingot c) Pulling a boat of a melt in multi-zone furnace d) using arc furnace to make a reaction. 10. When pulling an ingot, the impurity concentration in the solid, C, is different from the liquid, cs a) the relation for the segregation coefficient is k-C/C b) The same segregation equation can be used for the float zone technique c) the impurity concentration is always the same in the liquid or the solid. d) If k > 1, then the impurity concentration in the solid will be higher than the that in the liquid. 1159 Words I English (US)Explanation / Answer
9. b (pulling a seed immersed in a polysilicon melt while rotating the ingot)
Pulling method is called Czochralski(CZ ) Method.you can refer Czochralski method to understand the whole process
Related Questions
Navigate
Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.