Can anyone help me with this problem in the linked textbook? It would be greatly

Question

Can anyone help me with this problem in the linked textbook? It would be greatly appreciated!! Thanks!

3.10(the picture on the top right of the page goes along with it)

3.10) Holes are being steadily injected into a region of n-type silicon. In the steady state, the excess-hole concentration profile shown in fig. P3.10 is established in the n-type silicon region. Here "excess" means over and above the thermal-equilibrium concentration (in the absence of hole injection), denoted P_n0.if N_D = 10^16 /cm^3, n_i = 1.5 x 10^10 /cm^3, D_n = 12 cm^2/s, and W = .1 micrometer (m), find the density of the the current that will flow in the x direction.

Explanation / Answer

you didnt link anything :)

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