A quastion about silicon and transister. Silicon is now the most commonly used m

Question

A quastion about silicon and transister.

Silicon is now the most commonly used material for fabricating transistors and many other semiconductor devices because: [Check all correct choices.] silicon has a better crystal structure than germanium for achieving desirable transistor properties. the mobilities of free electrons and holes in silicon are greater than in germanium. the dielectric constant for silicon is greater than that for germanium. the energy gap E_g is greater for silicon than for germanium. all of the above. Put a check mark in the box in front of each statement that you believe is a TRUE statement. 2. Put a check mark in the box in front of each statement that you believe is a TRUE statement. According to the Rutherford'Bohr model for the hydrogen atom, the total energy of the orbiting electron can be any energy between 0 and -13.6 eV. A pure or a doped n or p-type semiconductor at absolute zero is a perfect insulator. The fixed impurity ions in a p-type semiconductor are positive ions. The reverse saturation current I_0 for a p-n junction diode is very insensitive to temperature changes. A forward bias of at least approximately 0. 7 volts must be applied to a real p-n junction diode to produce a non-zero forward current. The mobility mu_n of free electrons in a pure semiconductor decreases when the temperature increases. It is possible for the electrical conductivities of some pure or doped semiconductor materials to be temperature independent even though their electrical resistivities do depend on temperature. For an n-type semiconductor at room temperature, it is very likely that the donor level (E_d) electronic energy states in the energy gap will be occupied by electrons. A photodiode, a photocell, and a solar cell are all two-terminal devices that have one p-n junction. It is possible for a ten-percent increase in the drain-to-source voltage applied to a junction field-effect transistor to cause a ten-percent increase in the magnitude of the drain current. It is possible for a ten-percent increase in the drain-to-source voltage applied to a junction field-effect transistor to cause almost no increase in the magnitude of the drain current. The Fermi-Dirac function is used to calculate the mobilities of free charges in semiconductor materials: Applying a forward bias to the p-n junction in a injunction transistor causes the base-to-base resistance to increase by a factor called the intrinsic standoff ratio eta. C) For the semiconducting element silicon, the number of valence electrons per atom and the number of nearest-neighbor atoms for each atom in the crystal lattice is the same. What is that number?

Explanation / Answer

Q1)

a)

1. TRUE

2. FALSE

3. FALSE

4. TRUE

5. FALSE

b)

1. FALSE

2. TRUE

3. TRUE

4. FALSE

5. TRUE

6. TRUE

7. FALSE

8. TRUE

9. TRUE

10. FALSE

11. TRUE

12. TRUE

13. TRUE

c)

number of valence electrons is 4

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