Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and

Question

Consider a N-channel enhancement MOSFET with VGS = 3V, Vt = 1 V, VDS = 10 V, and lambda =0 (channel length modulation parameter). Which of the following best describes the behavior of this transistor? The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the triode region. A value of VDS=12 V would not result in higher IDS current. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in higher IDS current. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would result in a higher IDS current due to channel-length modulation. The current IDS is greater than 0 since the VGS has induced an inversion layer and the transistor is operating in the saturation region. A value of VDS=12 V would not result in a higher IDS current.

Explanation / Answer

Since Vgs>Vt the current Ids is greater than zero and since Vds>(Vgs - Vt) the MOSFET is operating in the saturation region.  For an NMOS, at a particular gate and source voltage, there is a particular level of voltage for drain, beyond which, increasing drain voltage seems to have no effect on current in the saturation region. Since lambda =0,Vds would not result in higher Ids current.

So option (D)

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