What are the typical design approaches to increase the switching speed? 7. This

Question

What are the typical design approaches to increase the switching speed? 7. This figure compares the ideal diode equation and real diode. Explain the phenomenon observed in this figure (I want to see a little more explanations in addition to the explanation already in the figure). current Tb) Forward Hias (V Recaldon Figure 5.37 Forward and reverse current-voltage characteristics plotted on semilog scales, with current normalized with respect to saturation current, lo: (a) the ideal forward characteristic is an exponential with an ideality factor n 1 (dashed straight line on log-linear plot). The actual forward characteristics of a typical diode (solid line) have four regimes of operation;(b) ideal reverse characteristic (dashed line) is a voltage- I current =-10. Actual leakage characteristics (solid line) are higher due to generation in the depletion region, and also show breakdown at high voltages

Explanation / Answer

Diffusion current
Diffusion current is holes and electrons moving from zones of high concentration, where they are the larger part carrier, to territories of low concentration, where they progress toward becoming minority bearers. This happens until the point that they are consistently dispersed. Unlike drift, diffusion takes place without an electric field being present.
This implies both drift current and diffusion current are available in equilibrium however the total current density J = 0.This is on the grounds that for each electron that diffuses from the n-side to the p-side there is an electron that floats from the p-side to the n-side. The same goes for holes. The two currents balance each other and the aggregate current thickness J = 0.

High level injection
The injection level is characterized as n/p0 where n is the minority carrier (e.g. electrons') density excess at non-balance while p0 is the balance density of the majority part bearers (e.g. holes).

The injection level depends, on the connection between abundance carrier density ( n) and the dominant part transporter density p0 (for the most part doping N - to keep it straightforward) The infusion level relies upon the proportion between n and N

The injection level is imperative since it gives you a clue which recombination channel is constraining the performance (otherwise known as lifetime) of your solarcell. Under low injection it is constrained by deformity recombination, under high injection it is restricted by Auger (aberrant semiconductor as Si) or radiative (coordinate semiconductor as GaAs) recombination.

Ohmic effects
Ohmic effects must be as low-resistive as could reasonably be expected, so the current flowing through a semiconductor device prompts the littlest parasitic voltage drop.

In good Ohmic contacts, the voltage drop that happens over the contact must be low and corresponding to the current(with the goal that the contacts don't present any nonlinearities).Since such contact I-Vs follows the Ohm's law, they are generally called ohmic effects.Ohmic contacts to semiconductors are regularly made utilizing Schottky contacts.

Recombination Current
The current in a p-n diode is because of carrier recombination or age some place inside the p-n diode structure. Under forward inclination, the diode current is because of recombination. This recombination can happen inside the quasi-neutral regions, inside the depletion region or at the metal-semiconductor Ohmic contacts. Under switch inclination, the current is because of generation. Carrier generation because of light will additionally build the current under forward and also turn reverse bias.

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