(al The doping level on the peside of s Q The doping level on the p-side of a pr
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(al The doping level on the peside of s Q The doping level on the p-side of a pr junction 3s theve ordors of mngnitude ( 1o uims mors than the n side the p-side . Ifx is the depletion on the n-side, and Xp the depletion depth on t Corxeer incorrect unrit (b) When n p and an n-type semiconductor is brought together at e junction, the madirity carriers on ench side diffuse across the junctions, the diusion procuss stops when tltie E- ficld dae fixedkmobile chareexert a foree that stops further diffusion (c)-1 he work function ofarmetal is defined as wind drini (n err 1a) A fonward heas acros jcmipownltage on the p-silo (e) Current across pn diodes is because ofDwhile current is due to hizmatnie e (0 Carrier generation and recombination takes place on the p-side'n side depletion region of s junction (g) The diffusion coefficient and mobility are denendendindependent paramcters (d) A forwand bias across a pm junction meins a tor Schoitky diode the pa- in the depletion region while for Schotky diode it is due to Gaie (h) Deplction approximation assumes nom 0) Current in a pn-diode is due to fnar Hints: (some (not all) of these expressions may be usefiul above] charge not independent, positive charge, minority, Compton effect, charge transpo valence to conduction band. apply voltage across a device, positive, thermal equilibrium, n Fixed and valence hand, depletion region, and it distance from the nucleus, n, poidl, o. P, np Pa probability of occupation, equilibrium, energy d stribution, diffusion, electrons in tree egative, pace, independent, mobile carriersExplanation / Answer
A. The doping level on p-side is more than on n- side. The depletion region penetrates more on n side. Hence, Xn >Xp. Correct
B. When p and n type materials bought together, depletion region forms due to diffusion of charge carriers. Correct.
C. Work function is the minimum energy required to remove electron from the metal to a point in the vaccum outside the metal.
D. A diode is said to operate in forward bias, the voltage at positive ( anode) is more positive than at negative ( cathode) or positive is connected to p side of the diode.
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