Please help shows the cross section of an NMOS device that includes source and d

Question

Please help

shows the cross section of an NMOS device that includes source and drain resistances. These resistances take into account the bulk n+ semiconductor resistance and the ohmic contact resistance. The current-voltage relations can be generated by replacing VGS by VG-IDRS and VDS by VD -ID(RS + RD) in the ideal equations. Assume transistor parameters of VT = 1 V and Kn = 1 mA/V2. (a) Plot the following curves on the same graph: ID versus VD for VG =2 V and VG =3 V over the range 0 VD 5 V for (i) RS = RD = 0 and (ii) RS = RD = 1 kohm. (b) Plot the following curves on the same graph: ID versus VG for VD = 0.1 V and VD = 5 V over the range 0 ID 1 mA for (i) RS = RD = 0 and (ii) Rs = RD = 1 kohm.

Explanation / Answer

i have uploaded the answers here in this link, please find it, sorry for the delay, but it was a lengthy one

https://www.dropbox.com/sh/3jkui2h1o0bzyzf/4sr2EeyGwo

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