thank you! Refer to Fig. 3-10, which shows the E vs. k dispersion relations for
ID: 2989935 • Letter: T
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thank you!
Refer to Fig. 3-10, which shows the E vs. k dispersion relations for gallium arsenide (GaAs) and for silicon (Si) along the [111] and [100] directions, showing both valence and conduction bands. Neglecting differences in electron scattering rates in the two materials, would you expect Si or GaAs to have the greatest electron mobility mu n? If a constant force were applied in the [100] direction for a short period of time on an electron initially located at the conduction band minimum of each semiconductor and if scattering were neglected, would the magnitude of change in k in Si be greater, equal to, or smaller than the magnitude of the change in k in GaAs for the same force F?Explanation / Answer
Q-A gallium arsenide has greater mobility than silicon.
Q-B K value is greater in Si as compared to GaAs.
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