This same diode (as in Problem 1) is now forward biased and the forward current

Question

This same diode (as in Problem 1) is now forward biased and the forward current is measured at 1.0 mA. (If you did not get a reasonable answer for 1(f), use I0 = 0.1 fA in this problem) a. What is the forward bias on the diode? b. What is the concentration of excess minority electrons in the P region at the depletion region boundary under these conditions? c. What is the concentration of excess majority holes in the P region at the depletion region boundary? d. What is the resistivity of the N type silicon in the neutral region? e. What will be the voltage drop across the N neutral region under these forward bias conditions? Was it reasonable to ignore this drop when calculating the forward bias on the diode?

Explanation / Answer

You should probably include the diode from problem 1 which is clearly necessary to solve this problem.

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