Can anyone please help me to write an introduction and Analysis parts for this l

Question

Can anyone please help me to write an introduction and Analysis parts for this lab?

I did change the Power & kept everything else the same for first 5 wafers & then changed the Pressure & kept everything else the same for other 5 wafers.

So please help me to write it. Thank you very much.

Laboratory Exercise 5.1 Copper Sputtering objective: Determine the effects on film deposition using the MKS Plasma Process Training System. Equipment Needed: MKS PPTS-1A Plasma Process Training System Thin metal film measurement system, e.g. Four-Point Probe 3 -inch oxidized silicon wafers or silica disks overview: In this lab, you will use the MKs Plasma Process Training System to deposit copper films under various conditions. Procedure: 1. Design and run experiments to observe the effects of argon pressure, pumping rate, RF power, sputter time, electrode spacing, etc. on deposition rate, uniformity, color, and any other film characteristics you can measure. 2. Observe the effects of the tested conditions on the plasma structures and spectra. 3. observe how the different process conditions affect the RF match settings. 4. Measure/quantify deposited results including: deposition rate, deposition non- uniformity, film color and texture, defects, etc. Analysis: 26

Explanation / Answer

INTRODUCTION:

Sputtering is a highly efficient, less expensive, reproducible thin-film growth technique. It is widely adopted in many industrial applications, which includes semiconductor chip manufacturing. Different thin-film materials have been successfully fabricated by sputtering processes, the most common application of sputtering is metal film deposition by direct-current (DC) sputtering using a metal target using high vacuum. Al and Cu may be the most widely studied sputtered metal films, used as interconnection wires in semiconductor chips. It is quite difficult to produce high-quality films of Al and Cu, because the sputtered metal atoms or clusters in the sputtering chamber and on the film surface are highly vulnerable to oxidation by the chamber residual oxygen. The equilibrium partial pressure of oxygen at 150°C, can be as low as 2.52 × 10114 Pa and 9.98 × 1027 Pa for Al2O3 and Cu2O, respectively, suggesting that achieving high-purity films depends on the kinetic aspect of the film growth. The growth rate needs to be higher than the oxidation speed of the metal atoms on the film surface. Therefore, an exceedingly high growth rate (1–10 nm s1) is preferable in mass production lines, using high sputtering power under very low base-pressure conditions (<106 Pa). It is important to maintain high vacuum in sputtering systems due to cyclical loading/unloading of samples.

The quality of the metal film produced by sputtering can be improved without adopting a high-vacuum system by considering target material condition. Target material quality is so controlled to obtain very low-impurity concentrations and uniform grain structure. This results in reproducible high quality films. However, targets are polycrystalline and having grain boundaries.

Using radio-frequency (RF) sputtering technique high-quality Cu thin films on an Si substrate can be procuced. Resulting films can be comparable to epitaxial films. Films produced in such system can produce films of much better quality than using polycrystalline target..

To produce high-quality Cu thin film with a single-crystal Cu target and RF sputter deposition, we have adjusted the sputtering pressure, and RF power for metal film production.

Epitaxial films are good as conductor wires because they are free from crystal defects, grain boundary effects. RF plasma technique is overall a common method to produce very high quality films using lower quality vacuum process.

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