Semiconductors Physics: Please answer in a simple way with details without short

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Semiconductors Physics:

Please answer in a simple way with details without shortcuts.

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Assume an abrupt p-n junction in silicon. One side of the junction is uniformly doped with phosphorus, giving a resistivity of about 4.5 cm at room T. The other side of the junction is uniformly doped with boron, whereby the boron doping density is 1000 times higher than the phosphorus doping density on the n-type side. a) What is the built-in voltage? b) What is the space charge region width (also called the "depletion width") at VO= 0 V? Va c) How far does the space charge region extend into each side of the device at Vo-2 V?

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