What are the majority carriers of electric current in Boron-doped Silicon? Holes

Question

What are the majority carriers of electric current in Boron-doped Silicon? Holes Electrons Boron ions Silicon atoms Cold worked aluminum has a higher electrical resistivity than annealed aluminum. This is because cold-worked Al has a higher strength so the resistivity is increased cold-worked Al has a higher dislocation density so the resistivity is increased the martensite that forms in cold-worked Al naturally has a higher resistivity the grains are aligned from cold-work and the alignment causes the resistivity to increase The addition of a boron (B) impurity to otherwise pure silicon (Si) will Decrease conductivity due to additional scattering of electrons due to the impurity Create an additional allowable energy level inside the band-gap called an acceptor level Create an extrinsic semiconductor with the majority charge earner being a hole instead of an electron All of the above A and B only A and C only B and C only What would you predict would result from adding a small amount of nitrogen (called "doping") to an otherwise pure silicon material? The nitrogen impurity will increase resistivity Nitrogen will create vacancies that will decrease resistivity Nitrogen is a gas and should have no impact on the electronic properties of the silicon Nitrogen will create a "donor level" in the band structure that results in an n-type extrinsic semiconductor Nitrogen will create an "acceptor level" in the band structure that results in a p-type extrinsic semiconductor Nitrogen will make the silicon more intrinsic which will cause a decrease in resistivity Assuming the electrical conductivity of pure silver is higher than pure copper, what would you predict would result from adding -0.5wt% silver to an otherwise pure copper material? Conductivity will increase Conductivity will decrease Conductivity will not change It's impossible to predict without more information True/False Resistance is a measure of performance while resistivity is a material property. Resistivity of a metal will increase with increasing temperature. Resistivity of an intrinsic semiconductor will increase with increasing temperature. It's possible for a compound semiconductor to exhibit intrinsic behavior. The band structures for electrical insulators and semiconductors are similar except for the magnitude of the band gap.

Explanation / Answer

1-a hole (boron is a P-type acceptor impurity creates hole, a positive charge carrier. )

2-d (Cold working of metal causes grain distortion and introducesimperfection in the crystal structure which affects the electrical property)

3-g-(an impurity lacking an electron as compared with silicon, having three electrons in the valence shell as compared with four for silicon)

4-f(The pentavalent impurity forms four covalent bonds to four silicon atoms with four of the five electrons, fitting into the lattice with one electron left over.Application of an external electric field produces strong conduction in the doped semiconductor in the conduction band)

5-a

6-T(resistance is the ratio of the voltage applied to the electric current)

7-T

8-F(As the temperature of the semi-conductor is increased, the electrons in the valence band gain sufficient energy to escape from the confines of their atoms)

9-T

10-T

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