Chapter 3 Transistor Construction 2. What is the major difference between a bipo

Question

Chapter 3

Transistor Construction

2. What is the major difference between a bipolar and a unipolar device?

Transistor Operation

8. Which of the transistor currents is always the largest? Which is always the smallest? Which two currents are relatively close in magnitude?

Common-Base Configuration

11. Using the characteristics of Fig. 7, determine VBE at IE = 5 mA for VCB = 1, 10, and 20 V. Is it reasonable to assume on an approximate basis that VCB has only a slight effect on the relationship between VBE and IE?

14             a. Using the characteristics of Figs. 7 and 8, determine IC if VCB = 10 V and VBE = 800 mV.

b. Determine VBE if IC = 5 %u03BCA and VCB = 10 V.

c. Repeat part (b) using the characteristics of Fig. 10b.

d. Repeat part (b) using the characteristics of Fig. 10c.

e. Compare the solutions for VBE for parts (b) through (d). Can the difference be ignored if voltage levels greater than a few volts are typically encountered?

Transistor Amplifying Action

17. Calculate the voltage gain (Av = VL/Vi) for the network of Fig. 12 if Vi = 500 mV and R = 1 k%u03A9. (The other circuit values remain the same.)

Common-Emitter Configuration

22.           a. Using the characteristics of Fig. 14a, determine ICEO at VCE = 10 V.

b. Determine %u03B2dc at IB = 10 %u03BCA and VCE = 10 V.

c. Using the %u03B2dc determined in part (b), calculate ICBO.

Transistor Specification Sheet

34. Based on the data of Fig. 23, what is the expected value of ICEO using the average value of %u03B2dc?

Explanation / Answer

Vbe is about 0.6 volts assuming a silicon transistor.
Ib = (Vcc%u20130.6) / Rb
Ic = HFE%u2022Ib = (HFE/Rb)(Vcc%u20130.6)
Vce = Vcc %u2013 Rc(HFE/Rb)(Vcc%u20130.6)

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