A 2-micron long block of p-type silicon has a cross-sectional area of 1 micron b
ID: 2989421 • Letter: A
Question
A 2-micron long block of p-type silicon has a cross-sectional area of 1 micron by 1 micron. Electrons are injected from the left and holes are injected from the right in the following densities: n=7Times1016 cm-3, p=3Times1016 cm-3 Which of the following are components of the total current? electron drift electron diffusion hole diffusion hole drift With thermal voltage VT = 0.0258 V and an electron mobility of 1320 cm2 / Vs, what is the electron diffusion coefficient Dn in cm2/s? With hole mobility of 465 cm2 / Vs, what is the total hole drift current in microamps? If we define current as positive when flowing in the positive x direction, what is the total current through this bar of silicon in microamps??Explanation / Answer
1. Here the total current is the dirrection of HOLES movement & in this case there is no externole power supply so that the total current is in dirrection of holes diffusion.
2. Dn = Vt * mobility
= 0.0258 * 1350 = 34.83 cm2/sec
3. Here there is no externole powersupply , hence drift current = 0
Related Questions
Hire Me For All Your Tutoring Needs
Integrity-first tutoring: clear explanations, guidance, and feedback.
Drop an Email at
drjack9650@gmail.com
drjack9650@gmail.com
Navigate
Integrity-first tutoring: explanations and feedback only — we do not complete graded work. Learn more.