easy problem of p-n junction,semiconductor Q1. Under forward biasing, what proce

Question

easy problem of p-n junction,semiconductor

Q1. Under forward biasing, what processes occur in the quasi-neutral regions adjacent to the depletion region edges?

1.Drift and diffusion

2.Diffusion and recombination

3.Generation and diffusion

4.generation and drift

also give me proper explanation.

Q2. Under 'reverse' biasing, what processes occur in the quasi-neutral regions adjacent to the depletion region edges?

1.Drift and diffusion

2.Diffusion and recombination

3.Generation and diffusion

4.generation and drift

also give me proper explanation.

I'll give points who gives me most detailed explanation

Explanation / Answer

1. Diffusion and recombination

Under forward bias, majority carrier from one side which is minority carrier on the other side diffuse into the minority side because of concentration gradient (i.e. difference in concentration). Hence, in forward bias, current is diffusion current (i.e. current is due to minority carriers on both sides). Recombination happens near edges of depletion region thus reducing the potential barrier or width if depletion region in forward bias.

2. Drift and generation

In reverse bias, diffusion current is 0 since carrier diffusion is opposed by the applied bias. Also due to bias, near the depletion region, there is generation of carriers since the battery terminals attracts opposite sign charges leaving behind ions near the depletion region. This increases the width of the depletion region or increases the barrier.

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