500 .5 V Figure 3 The transistor has the following ratings: PD(max)\" 650 mw.VCE
ID: 3349137 • Letter: 5
Question
500 .5 V Figure 3 The transistor has the following ratings: PD(max)" 650 mw.VCE(max) = 40 V, and iC (max)" 200 mA 20) Refer to Figure 3. The maximum value that Vcc can be adjusted to without exceeding the 20) VCE(max) rating is (ignore other max ratings). A) 60 V B) 40 V C) 45 V D) 50 v 21) Refer to Figure 3. If Vcc is set to 48 V, PD(max) is exceeded by 21) A) 110 mW B) 80 mW C) 310 mW D) 55 mW 22) Refer to Fig 3. Assume Vcc is lowered to 15 V. The transistor is 22) A) cutoff B) saturated C) in the linear range 23) The symbol hFE means the same as 23) A) aDC C) Ay D) PD(max) 24) hFE varies with 24) A) temperature C) both A and B B) collector current D) none of the above 29 A 10 mV ac signal is applied to the base of a properly biased transistor with RC-1.2 k and re- 36 O. The output ac voltage is A) 152 mV B) 33 mV C) 333 mV D) 105 mVExplanation / Answer
Answer :- 20) Option D is correct.
First we find the base current. We can write,
2.5 - 18*IB - 0.7 = 0 . Thus IB = 0.1 mA. Hence collcetor current = beta x 0.1 mA = 20 mA.
Now due to this collector current voltage droop in RC is equal to 500 x 20 mA = 10 V.
Hence maximum Vcc value must be equal to 10 + VCEmax = 10+40 V = 50 V.
Answer :- 24) Option B is correct.
Both implies the current gain. hfe is in small signal model whereas beta is the current gain in DC model.
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Answer :- 30) When base voltage is equal to 3 V, then base current would be-
IB = (3 - 0.7)/2.2 mA = 1.0454 mA. Thus the collector current would be equal to beta times the base current.
Thus current through LED = collector current = 100 x 1.0454 mA = 104.54 mA or 105 mA.
Answer :- 31) Option A and B both are correct.
NAND gate gives HIGH when any one or both inputs are LOW. Also NAND gives output as LOW when both inputs are HIGH.
Answer :- 32) Option D is correct.
NOR gate produces output as LOW if at least any one input is HIGH. NOR gives output HIGH only when all inputs are LOW.
Answer :- 33) Option A is correct.
Transistor is in OFF switch mode in cut-off and in ON switch mode in saturation mode.
Answer :- 34) Option A is correct.
In photo transistor, base is made as photo sensitive. When light falls on the base region, electron-hole pair are generated and being moved under the influence of the electric field.
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