CeFe4Sb12 is a p-type, narrow band-gap semiconductor. This behaviour is thought

Question

CeFe4Sb12 is a p-type, narrow band-gap semiconductor. This behaviour is thought to result from a "hole" being present in the Fe 3d valence states. Provide appropriate answers to the questions below. (NOTE: The average oxidation states in this material are: Ce, Fe2.25 Sb1) Briefly explain the difference between p-type and n-type semiconductors Figures showing the (general) band-structure of p-type and n-type materials should be included with your answer. Briefly explain why this material can become an n-type semiconductor when 27Co is substituted for26Fe (i.e., CeFe4 CoxSb12) Is a p-type semiconductor primarily a hole conductor or an electron conductor? (Include a discussion with your answer.) a) b)

Explanation / Answer

In p-type semiconductors, holes are the majority carriers and electrons are the minority carriers. P-type semiconductors are created by doping an intrinsicsemiconductor with acceptor impurities (or doping ann-type semiconductor). A common p-type dopant for silicon is boron.

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