The figure below plots the logarithm of conductivity of Indium doped Germanium a

Question

The figure below plots the logarithm of conductivity of Indium doped Germanium as a function of one over temperature.

(a)What kind of conductor is indium doped germanium in region A? Ionic, intrinsic, n-type, p-type of metallic

(b)Why does the conductivity change rapidly in region A?

   (1) The mobility of charge carriers increases with temperature

   (2) The concentration of holes increases with increasing temperature

   (3) The concentration of intrinsic charge carriers increases with increasing temperature.

   (4) Conductivity always increases with temperature

   (5) Ioinization of germaniun requires some minimum temeprature

   (6) Ionization of indium requires some minimum temperature

(c) Why is the conductivity relatively constant in region B?

   (1) The concentration of holes is fixed by the concentration of indium

   (2) The increasing concentration of holes offsets the decreasing concentration of conduction electrons

   (3) The increasing concentration of holes offsets the decreasing concentration of conduction electrons

   (4) The indium is ionized as the temperature is raised in this region

   (5) The concentration of conduction electrons is fixed by the concentration of germanium

   (6) The conductivity of a semiconductor does not depend on temperature

(d) What kind of conductor is phosphorous doped silicon in region B? Ionic, intrinsic, n-type, p-type of metallic

Explanation / Answer

a)P TYPE

b)The concentration of holes increases with increasing temperature

c)The concentration of holes is fixed by the concentration of indium

d)n type

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