Given a 4\"(100) silicon wafer with a background phosphorous concentration of 4E

Question

Given a 4"(100) silicon wafer with a background phosphorous concentration of 4E15 cm^-3. Boron is thermally diffused into the surface of the wafer in a pre-deposition process (unlimited source diffusion) at a temperature of 1000 degrees celsius for 30 minutes A) What is the diffusivity of the boron during the pre-deposition process? B) What is the boron impurity dose from the pre-deposition process? C)If the pre-deposition is followed by a drive-in process for 1 hour at 1100 degrees celsius what is the junction depth? **Show all work

Explanation / Answer

Manufacturing of an integrated circuit with 9 masks was done in class 10 clean room with a yield of 99%. Refinement of the circuit required increasing the number of masks to 13 without changing the circuit area.

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