Calculate the threshold voltage of a Si-MOS transitor for an n+ polysilicon gate

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Calculate the threshold voltage of a Si-MOS transitor for an n+ polysilicon gate with silicon oxide thickness=50 angstroms, Nd=10^18 cm^-3 and a fixed charge of 2*10^10*q C/cm^2

Q5: a. Calculate the threshold voltage of a Si-MOS transistor for an n+ polysilicon gate with silicon oxide thickness- 50 angstroms, Nd-10A18 cmA-3, and a fixed charge of 2*10A10*q C/cmA2. Is it an enhancement or depletion mode device? c. What dose is required to change the threshold voltage to 0V? Assume a shallow boron implant. b. Is it an enhancement or depletion mode device?

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